Search results for "Giant magnetoresistance"

showing 10 items of 29 documents

Electrical Modeling of Monolithically Integrated GMR Based Current Sensors

2018

We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.

010302 applied physicsModel extractionMaterials sciencebusiness.industry010401 analytical chemistryElectrical engineeringGiant magnetoresistance01 natural sciences0104 chemical sciencesElectrical currentApplication-specific integrated circuit0103 physical sciencesHardware design languagesCurrent (fluid)business2018 Spanish Conference on Electron Devices (CDE)
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High spin polarization in Co2CrAl–Cr superlattice

2009

The electronic structure, magnetic properties and interface effects in Co2CrAl?Cr superstructures have been investigated by the use of first principle calculations. The results show that at the interface, a large magnetic moment and a high spin polarization can be induced by a strong ferromagnetic exchange interaction at the Cr?Co interface. However, at the CrAl?Cr interface, both the magnetic moment and the spin polarization of the Cr atoms are decreased due to a Cr?Cr antiferromagnetic interaction. It can also be found that the interface effect is only a short range effect. So, high spin polarization in Co2CrAl?Cr superlattice can be obtained. Based on this theoretical analysis, a large g…

Acoustics and UltrasonicsSpin polarizationCondensed matter physicsMagnetic momentMagnetoresistanceChemistryMagnetismSuperlatticeGiant magnetoresistanceCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceFerromagnetismAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsComputer Science::DatabasesJournal of Physics D: Applied Physics
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Giant Magnetoresistance (GMR) Magnetometers

2016

Since its discovering in 1988, the Giant Magnetoresistance (GMR) effect has been widely studied both from the theoretical and the applications points of view. Its rapid development was initially promoted by their extensive use in the read heads of the massive data magnetic storage systems, in the digital world. Since then, novel proposals as basic solid state magnetic sensors have been continuously appearing. Due to their high sensitivity, small size and compatibility with standard CMOS technologies, they have become the preferred choice in scenarios traditionally occupied by Hall sensors. In this chapter, we analyze the main properties of GMR sensors regarding their use as magnetometers. W…

CMOSComputer scienceMagnetometerlawSystem levelSpin valveMagnetic storageSolid-stateHall effect sensorGiant magnetoresistanceEngineering physicslaw.invention
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Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits

2021

Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.

CMOSbusiness.industryComputer sciencelawHardware_INTEGRATEDCIRCUITSElectrical engineeringGiant magnetoresistanceIntegrated circuitbusinessNetwork topologyCadencelaw.inventionElectronic circuit2021 13th Spanish Conference on Electron Devices (CDE)
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Probing giant magnetoresistance with THz spectroscopy

2014

We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined.

Condensed Matter::Materials ScienceMaterials scienceCondensed matter physicsScatteringTerahertz radiationGiant magnetoresistanceElectronSpectroscopyElectron scatteringTerahertz spectroscopy and technologyMagnetic field
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Magnetic Field Sensors Based on Giant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing

2009

The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among o…

EngineeringSensing applicationsbusiness.industryElectrical engineeringSolid-stateGiant magnetoresistanceReviewlcsh:Chemical technologyBiochemistryAtomic and Molecular Physics and OpticsAnalytical ChemistryMagnetic fieldmagnetic field sensorsElectrical currentphysical sensorsCMOSlcsh:TP1-1185Electrical and Electronic Engineeringgiant magnetoresistancebusinessInstrumentationcurrent sensorsSensors (Basel, Switzerland)
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Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level

2010

An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed. Different spin-valve based full Wheatstone bridge sensors, with the current straps integrated in the chip, have been considered. These devices have been experimentally characterized in order to extract the model parameters. In this respect, we have focused on the sensors linear operation regime. The model, which allows the individual description of the magnetoresistive elements, has been implemented in a circuit simulator by means of a behavioral description language: Verilog-A. We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC)…

EngineeringWheatstone bridgebusiness.industryElectrical engineeringGiant magnetoresistanceIntegrated circuitWattmeterCondensed Matter PhysicsChipElectronic circuit simulationElectronic Optical and Magnetic Materialslaw.inventionPower (physics)Computer Science::Hardware ArchitecturelawMaterials ChemistryElectronic engineeringCurrent sensorElectrical and Electronic EngineeringbusinessSolid-State Electronics
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Sub-mA current measurement by means of GMR sensors and state of the art lock-in amplifiers

2015

Electric current measurement at the range of μA in integrated circuit has been traditionally carried out by micro-electronically engineered systems, such as current mirrors or charging capacitors. However, off-line, i.e., non-intrusive methods provide advantages related to size and power consumption. In this sense, giant magnetoresistance (GMR) magnetic sensors are optimal due to their sensitivity and CMOS compatibility. In this work, we make use of specifically designed CMOS GMR-based current sensors in combination with a custom electronic interface based on a low-voltage low-power lock-in amplifier, demonstrating the capability of this combination for current measurement in the range of μ…

Engineeringbusiness.industryAmplifierElectrical engineeringGiant magnetoresistanceSense (electronics)Integrated circuitlaw.inventionCapacitorCurrent mirrorCMOSHardware_GENERALlawCurrent sense amplifierElectronic engineeringbusiness2015 IEEE International Conference on Industrial Technology (ICIT)
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Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing

2014

This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.

FabricationMaterials scienceMagnetoresistancebusiness.industryElectrical engineeringGiant magnetoresistanceHardware_PERFORMANCEANDRELIABILITYIntegrated circuitlaw.inventionCMOSlawHardware_INTEGRATEDCIRCUITSOptoelectronicsMicroelectronicsElectric currentbusinessSensitivity (electronics)IEEE SENSORS 2014 Proceedings
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Giant Magnetoresistance in Rare Earth Compounds

2008

Inorganic ChemistryCondensed matter physicsChemistryRare earthIntermetallicGiant magnetoresistanceZeitschrift für anorganische und allgemeine Chemie
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